| PartNumber | STFI11N60M2-EP | STFI11N65M2 | STFI11NM65N |
| Description | MOSFET | Darlington Transistors MOSFET POWER MOSFET | MOSFET N CH 650V 11A I2PAKFP |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-281-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 550 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 12.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Series | STFI11N60M2 | MDmesh M2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 8 ns | 15 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.5 ns | 7.5 ns | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26 ns | 26 ns | - |
| Typical Turn On Delay Time | 9 ns | 9.5 ns | - |
| Unit Weight | 0.002822 oz | - | - |
| Packaging | - | Tube | - |
| Tradename | - | MDmesh II Plus | - |
| Package Case | - | I2PAKFP-3 | - |
| Pd Power Dissipation | - | 25 W | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Id Continuous Drain Current | - | 7 A | - |
| Vds Drain Source Breakdown Voltage | - | 650 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 670 mOhms | - |
| Qg Gate Charge | - | 12.5 nC | - |