 |  |  | |
| PartNumber | STFI13N65M2 | STFI13N80K5 | STFI13N60M2 |
| Description | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in I2PAKFP package | Darlington Transistors MOSFET POWER MOSFET | RF Bipolar Transistors MOSFET N-CH 600V 0.35Ohm 11A MDmesh II |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 430 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 17 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Height | 4.6 mm | - | - |
| Length | 16.4 mm | - | - |
| Product | Power MOSFET | - | - |
| Series | STFI13N65M2 | MDmesh K5 | MDmesh M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MDmesh M2 | - | - |
| Width | 10.4 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 12 ns | 16 ns | 9.5 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 7.8 ns | 16 ns | 10 ns |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | 42 ns | 41 ns |
| Typical Turn On Delay Time | 11 ns | 16 ns | 11 ns |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |
| Packaging | - | Tube | Tube |
| Package Case | - | I2PAK-3 | I2PAKFP-3 |
| Pd Power Dissipation | - | 35 W | 25 W |
| Vgs Gate Source Voltage | - | 30 V | 25 V |
| Id Continuous Drain Current | - | 12 A | 11 A |
| Vds Drain Source Breakdown Voltage | - | 800 V | 650 V |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
| Rds On Drain Source Resistance | - | 450 mOhms | 380 mOhms |
| Qg Gate Charge | - | 29 nC | 17 nC |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STFI13NM60N | MOSFET N-Ch 600V 0.28 Ohm 11A MDmesh II | |
| STFI13N65M2 | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in I2PAKFP package | ||
| STFI13N95K3 | MOSFET N-Ch 950 V 0.68 Ohm 10 A Zener-protect | ||
| STFI13NK60Z | MOSFET N-Ch 600V 0.48 Ohm 13A SuperMESH | ||
| STFI13N80K5 | Darlington Transistors MOSFET POWER MOSFET | ||
| STFI13N60M2 | RF Bipolar Transistors MOSFET N-CH 600V 0.35Ohm 11A MDmesh II | ||
| STFI13NM60N | MOSFET N-CH 600V 11A I2PAK FP | ||
| STFI13N65M2 | MOSFET N-CH 650V 10A I2PAKFP | ||
| STFI13N95K3 | MOSFET N CH 950V 10A I2PAKFP | ||
| STFI13NK60Z | MOSFET N-CH 600V 13A I2PAK FP | ||
| STFI13NM60N 2SK3569 | 全新原裝 | ||
| STFI13NM60N,13NM60N | 全新原裝 |