STGD

STGD8NC60KDT4 vs STGDL6NC60DIT4 vs STGD8NC60KT4

 
PartNumberSTGD8NC60KDT4STGDL6NC60DIT4STGD8NC60KT4
DescriptionIGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFETIGBT Transistors 600V 6A hyper fast IGBTIGBT 600V 15A 62W DPAK
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseDPAK-3DPAK-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGD8NC60KDSTGDL6NC60DIPowerMESH
PackagingReelReelDigi-ReelR Alternate Packaging
Continuous Collector Current Ic Max15 A13 A-
Height2.4 mm2.4 mm-
Length6.6 mm6.6 mm-
Width6.2 mm6.2 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity25002500-
SubcategoryIGBTsIGBTs-
Unit Weight0.012346 oz0.012346 oz-
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--62W
Reverse Recovery Time trr---
Current Collector Ic Max--15A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--30A
Vce on Max Vge Ic--2.75V @ 15V, 3A
Switching Energy--55μJ (on), 85μJ (off)
Gate Charge--19nC
Td on off 25°C--17ns/72ns
Test Condition--390V, 3A, 10 Ohm, 15V
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STGDL6NC60DIT4 IGBT Transistors 600V 6A hyper fast IGBT
STGDL6NC60DIT4 IGBT Transistors 600V 6A hyper fast IGBT
STGD8NC60KDT4 IGBT 600V 15A 62W DPAK
STGD8NC60KT4 IGBT 600V 15A 62W DPAK
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