 |  | | |
| PartNumber | STGW40N120KD | STGW40N120KD,40N120KD | STGW40N120KD,GW40N120KD |
| Description | IGBT 1200V 80A 240W TO247 | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | IC Chips | - | - |
| Series | PowerMESH | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.229281 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | TO-247-3 | - | - |
| Input Type | Standard | - | - |
| Mounting Type | Through Hole | - | - |
| Supplier Device Package | TO-247-3 | - | - |
| Power Max | 240W | - | - |
| Reverse Recovery Time trr | 84ns | - | - |
| Current Collector Ic Max | 80A | - | - |
| Voltage Collector Emitter Breakdown Max | 1200V | - | - |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | 120A | - | - |
| Vce on Max Vge Ic | 3.85V @ 15V, 30A | - | - |
| Switching Energy | 3.7mJ (on), 5.7mJ (off) | - | - |
| Gate Charge | 126nC | - | - |
| Td on off 25°C | 48ns/338ns | - | - |
| Test Condition | 960V, 30A, 10 Ohm, 15V | - | - |
| Pd Power Dissipation | 240 W | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.8 V | - | - |
| Continuous Collector Current at 25 C | 80 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Maximum Gate Emitter Voltage | +/- 25 V | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STGW40N120KD | IGBT 1200V 80A 240W TO247 | |
| STGW40N120KD,40N120KD | 全新原裝 | ||
| STGW40N120KD,GW40N120KD | 全新原裝 | ||
| STGW40N120KD,GW40N120KD, | 全新原裝 |