 |  |  | |
| PartNumber | STGW60V60DF | STGW60V60DF GW60V60DF | STGW60V60DLF |
| Description | IGBT Transistors 600V 60A High Speed Trench Gate IGBT | IGBT BIPO 600V 60A TO247 | |
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.35 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 80 A | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | STGW60V60DF | - | * |
| Packaging | Tube | - | - |
| Brand | STMicroelectronics | - | - |
| Gate Emitter Leakage Current | 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 600 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.229281 oz | - | - |
| Package Case | - | - | - |
| Input Type | - | - | - |
| Mounting Type | - | - | - |
| Supplier Device Package | - | - | - |
| Power Max | - | - | - |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | - |
| Voltage Collector Emitter Breakdown Max | - | - | - |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | - |
| Vce on Max Vge Ic | - | - | - |
| Switching Energy | - | - | - |
| Gate Charge | - | - | - |
| Td on off 25°C | - | - | - |
| Test Condition | - | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STGW60V60DF | IGBT Transistors 600V 60A High Speed Trench Gate IGBT | |
| STGW60V60DF | IGBT 600V 80A 375W TO247 | ||
| STGW60V60DLF | IGBT BIPO 600V 60A TO247 | ||
| STGW60V60DF GW60V60DF | 全新原裝 |