 |  |  | |
| PartNumber | STH410N4F7-2AG | STH400N4F6-6 | STH400N4F6-2 |
| Description | MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package | MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET | MOSFET N-CH 40V 180A H2PAK-2 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | H2PAK-2 | TO-263-7 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 200 A | 180 A | - |
| Rds On Drain Source Resistance | 1.1 mOhms | 1.15 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 120 nC | 404 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
| Pd Power Dissipation | 365 W | 300 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | STripFET | - | - |
| Packaging | Reel | Reel | Reel |
| Series | STH410N4F7-2AG | STH400N4F6 | N-channel STripFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Forward Transconductance Min | - | - | - |
| Development Kit | - | - | - |
| Fall Time | 44.2 ns | 168 ns | 168 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 198 ns | 184 ns | 184 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 108 ns | 168 ns | 168 ns |
| Typical Turn On Delay Time | 35 ns | 71 ns | 71 ns |
| Unit Weight | 0.139332 oz | 0.056438 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 300 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 180 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
| Rds On Drain Source Resistance | - | - | 1.15 mOhms |
| Qg Gate Charge | - | - | 404 nC |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STH47N60DM6-2AG | MOSFET Automotive N-channel 600 V, 0.070 typ., 36 A MDmesh DM6 Power MOSFET in an H PAK-2 package | |
| STH410N4F7-2AG | MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package | ||
| STH410N4F7-6AG | MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package | ||
| STH400N4F6-6 | MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET | ||
| STH400N4F6-2 | MOSFET N-CH 40V 180A H2PAK-2 | ||
| STH400N4F6-6 | MOSFET N-CH 40V 180A H2PAK-6 | ||
| STH410N4F7-2AG | MOSFET N-CH 40V H2PAK-2 | ||
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