STL16N65

STL16N65M2 vs STL16N65M2-CUT TAPE vs STL16N65M5

 
PartNumberSTL16N65M2STL16N65M2-CUT TAPESTL16N65M5
DescriptionMOSFET N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageMOSFET N-CH 650V HV POWERFLAT
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerFLAT-5x6-HV-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current7.5 A--
Rds On Drain Source Resistance395 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge19.5 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation56 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameMDmesh--
PackagingReel-Reel
SeriesSTL16N65M2-MDmesh M5
BrandSTMicroelectronics--
Fall Time11.3 ns--
Product TypeMOSFET--
Rise Time8.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time36 ns--
Typical Turn On Delay Time11.3 ns--
Package Case--PowerFlat-8
Transistor Type--1 N-Channel
Pd Power Dissipation--90 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--12 A
Vds Drain Source Breakdown Voltage--650 V
Rds On Drain Source Resistance--299 mOhms
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STL16N65M2 MOSFET N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package
STL16N65M2 MOSFET N-CH 650V 7.5A POWERFLAT
STL16N65M5 MOSFET N-CH 650V HV POWERFLAT
STL16N65M2-CUT TAPE 全新原裝
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