 | |  | |
| PartNumber | STL30N10F7 | STL30P3LLH6 | STL31N65M5 |
| Description | MOSFET N-Ch 100V 0.027 Ohm typ. 8A STripFET VII | MOSFET P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package | MOSFET N-Ch 650V 0.135 Ohm typ. 15A MDmeshM5 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerFLAT-5x6-8 | PowerFLAT-5x6-8 | PowerFLAT-8x8-HV-5 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V | 710 V |
| Id Continuous Drain Current | 8 A | 9 A | 15 A |
| Rds On Drain Source Resistance | 27 mOhms | 30 mOhms | 162 mOhms |
| Vgs th Gate Source Threshold Voltage | 4.5 V | 1 V | 4 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 25 V |
| Qg Gate Charge | 14 nC | 12 nC | 45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 4.8 W | 4.8 W | 125 W |
| Configuration | Triple | Single | Triple |
| Tradename | STripFET | STripFET | MDmesh |
| Packaging | Reel | Reel | Reel |
| Series | STL30N10F7 | STL30P3LLH6 | STL31N65M5 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 4.6 ns | 21 ns | 8.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 14 ns | 15 ns | 8 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14.8 ns | 24 ns | 11 ns |
| Typical Turn On Delay Time | 9.8 ns | 15 ns | 46 ns |
| Channel Mode | - | Enhancement | - |
| Moisture Sensitive | - | - | Yes |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
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