STP12

STP12PF06 vs STP12NM50N P12NM50N vs STP12NM60N

 
PartNumberSTP12PF06STP12NM50N P12NM50NSTP12NM60N
DescriptionMOSFET P-Ch 60 Volt 12 AmpMOSFET N-CH 600V 10A TO-220
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance200 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation60 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height9.15 mm--
Length10.4 mm--
SeriesSTP12PF06--
Transistor Type1 P-Channel--
TypeMOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min6 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.011640 oz--
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STP12PF06 MOSFET P-Ch 60 Volt 12 Amp
STP12NM60N MOSFET N-CH 600V 10A TO-220
STP12PF06 MOSFET P-CH 60V 12A TO-220
STP12PF06 P12PF06 全新原裝
STP12NM50N P12NM50N 全新原裝
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