 | | |
| PartNumber | STP13NM60N | STP13NM60ND |
| Description | MOSFET N-Ch 600 Volt 11 Amp Power MDmesh | MOSFET N-CH 600V 0.32Ohm 11A FDMesh II |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V |
| Id Continuous Drain Current | 11 A | 11 A |
| Rds On Drain Source Resistance | 360 mOhms | 380 mOhms |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 90 W | 109 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | MDmesh | - |
| Packaging | Tube | Tube |
| Series | STP13NM60N | STP13NM60ND |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 10 ns | 15.4 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | 10 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 9.6 ns |
| Typical Turn On Delay Time | 3 ns | 46.5 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Qg Gate Charge | - | 24.5 nC |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STP13NM60N | MOSFET N-Ch 600 Volt 11 Amp Power MDmesh | |
| STP13NM60ND | MOSFET N-CH 600V 0.32Ohm 11A FDMesh II | ||
| STP13NM60ND | MOSFET N-CH 600V 11A TO-220 | ||
| STP13NM60N | MOSFET N-CH 600V 11A TO-220 | ||
| STP13NM60N 13NM60N | 全新原裝 | ||
| STP13NM60N TO220-3 | 全新原裝 | ||
| STP13NM60N,13NM60N, | 全新原裝 | ||
| STP13NM60N,13NM60N,13N60 | 全新原裝 | ||
| STP13NM60N,STF13NM60N,P1 | 全新原裝 | ||
| STP13NM60N,STP14NM65N,P1 | 全新原裝 |