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| PartNumber | STP14NM50N | STP14NM65N | STP14NM50N P14NM50N |
| Description | MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II | IGBT Transistors MOSFET N-channel 650V | |
| Manufacturer | STMicroelectronics | ST | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 280 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 2 V | - | - |
| Qg Gate Charge | 42 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 90 W | - | - |
| Configuration | Single | - | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | - | - |
| Series | STP14NM50N | - | - |
| Transistor Type | N-Channel | - | - |
| Type | MDmesh II Power MOSFET | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 32 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.011640 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STP14NM50N | MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II | |
| STP14NM65N | IGBT Transistors MOSFET N-channel 650V | ||
| STP14NM50N | MOSFET N-CH 500V 12A TO-220 | ||
| STP14NM50N P14NM50N | 全新原裝 | ||
| STP14NM65N,14NM65N | 全新原裝 |