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| PartNumber | STP200NF03 | STP200NF04 | STP200NF04L |
| Description | MOSFET N-Ch 30 Volt 120 Amp | IGBT Transistors MOSFET N-Ch 40 Volt 120 Amp | MOSFET N-CH 40V 120A TO-220 |
| Manufacturer | STMicroelectronics | ST | ST |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 3.2 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Height | 9.15 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STP200NF03 | N-channel STripFET | STripFET II |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 4.6 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 200 S | - | - |
| Fall Time | 60 ns | 120 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 195 ns | 320 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | 140 ns | - |
| Typical Turn On Delay Time | 30 ns | 30 ns | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |
| Packaging | - | Tube | Tube |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 310 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 120 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Rds On Drain Source Resistance | - | 3.7 mOhms | - |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 40V |
| Current Continuous Drain (Id) @ 25°C | - | - | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 5V, 10V |
| Vgs(th) (Max) @ Id | - | - | 4V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 90nC @ 4.5V |
| Vgs (Max) | - | - | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 6400pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 3.8 mOhm @ 50A, 10V |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-220AB |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STP200NF03 | MOSFET N-Ch 30 Volt 120 Amp | |
| STP200NF04 | IGBT Transistors MOSFET N-Ch 40 Volt 120 Amp | ||
| STP200NF03 | MOSFET N-CH 30V 120A TO-220 | ||
| STP200NF04L | MOSFET N-CH 40V 120A TO-220 |