| PartNumber | STP33N60DM2 | STP33N60M2 | STP33N60DM6 |
| Description | MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 | MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V | 600 V |
| Id Continuous Drain Current | 24 A | 26 A | 25 A |
| Rds On Drain Source Resistance | 130 mOhms | 108 mOhms | 128 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3.25 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
| Qg Gate Charge | 43 nC | 45.5 nC | 35 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 190 W | 190 W | 190 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | MDmesh | MDmesh | - |
| Series | STP33N60DM2 | STP33N60M2 | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 9 ns | 9 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 9.6 ns | 9 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 62 ns | 109 ns | 7 ns |
| Typical Turn On Delay Time | 17 ns | 16 ns | 14 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Packaging | - | Tube | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |