 |  | |
| PartNumber | STP45N65M5 | STP45N60DM6 |
| Description | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V |
| Id Continuous Drain Current | 35 A | 30 A |
| Rds On Drain Source Resistance | 78 mOhms | 99 mOhms |
| Pd Power Dissipation | 208 W | 210 W |
| Configuration | Single | Single |
| Tradename | MDmesh | MDmesh |
| Packaging | Tube | - |
| Series | STP45N65M5 | STP45N60DM6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.011640 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 3.25 V |
| Vgs Gate Source Voltage | - | 25 V |
| Qg Gate Charge | - | 44 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Fall Time | - | 7.3 ns |
| Rise Time | - | 5.3 ns |
| Typical Turn Off Delay Time | - | 50 ns |
| Typical Turn On Delay Time | - | 15 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STP45N65M5 | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | |
| STP45N60DM6 | MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages | ||
| STP45N60DM6 | Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube | ||
| STP45N65M5 | MOSFET N-CH 650V 35A TO220 | ||
| STP45N65M5 45N65M5 | 全新原裝 |