STP55NF06F

STP55NF06FP vs STP55NF06F vs STP55NF06FP(E)

 
PartNumberSTP55NF06FPSTP55NF06FSTP55NF06FP(E)
DescriptionMOSFET N-Ch 60 Volt 55 Amp
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance15 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge44.5 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation30 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameSTripFET--
PackagingTubeTube-
Height9.3 mm--
Length10.4 mm--
SeriesSTP55NF06FPN-channel STripFET-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min18 S--
Fall Time15 ns15 ns-
Product TypeMOSFET--
Rise Time50 ns50 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time36 ns36 ns-
Typical Turn On Delay Time20 ns20 ns-
Unit Weight0.071959 oz0.071959 oz-
Package Case-TO-220-3-
Pd Power Dissipation-30 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-50 A-
Vds Drain Source Breakdown Voltage-60 V-
Vgs th Gate Source Threshold Voltage-3 V-
Rds On Drain Source Resistance-15 mOhms-
Qg Gate Charge-44.5 nC-
Forward Transconductance Min-18 S-
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STP55NF06FP MOSFET N-Ch 60 Volt 55 Amp
STP55NF06FP MOSFET N-CH 60V 50A TO220FP
STP55NF06F 全新原裝
STP55NF06FP(E) 全新原裝
STP55NF06FP,55NF06FP 全新原裝
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