STPSC4H065B

STPSC4H065B-TR vs STPSC4H065B-TR-CUT TAPE vs STPSC4H065B

 
PartNumberSTPSC4H065B-TRSTPSC4H065B-TR-CUT TAPESTPSC4H065B
DescriptionSchottky Diodes & Rectifiers 650 V 4A Schottky silicon carbide DPAK
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategorySchottky Diodes & Rectifiers-Diodes, Rectifiers - Single
RoHSY--
ProductSchottky Silicon Carbide Diodes-Schottky Silicon Carbide Diodes
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseD2PAK-2--
If Forward Current4 A--
Vrrm Repetitive Reverse Voltage650 V--
Vf Forward Voltage1.75 V--
Ifsm Forward Surge Current38 A--
ConfigurationSingle-Single
TechnologySiC-SiC
Ir Reverse Current0.04 mA--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 175 C-+ 175 C
SeriesSTPSC4H065-STPSC4H065
PackagingReel-Digi-ReelR Alternate Packaging
Operating Temperature Range- 40 C to + 175 C--
BrandSTMicroelectronics--
Product TypeSchottky Diodes & Rectifiers--
Factory Pack Quantity2500--
SubcategoryDiodes & Rectifiers--
Unit Weight0.009185 oz-0.009185 oz
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Speed--No Recovery Time > 500mA (Io)
Diode Type--Silicon Carbide Schottky
Current Reverse Leakage Vr--40μA @ 650V
Voltage Forward Vf Max If--1.75V @ 4A
Voltage DC Reverse Vr Max--650V
Current Average Rectified Io--4A
Reverse Recovery Time trr--0ns
Capacitance Vr F--200pF @ 0V, 1MHz
Operating Temperature Junction---40°C ~ 175°C
Vf Forward Voltage--1.75 V
Ir Reverse Current--0.04 mA
If Forward Current--4 A
Vrrm Repetitive Reverse Voltage--650 V
Ifsm Forward Surge Current--38 A
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STPSC4H065B-TR Schottky Diodes & Rectifiers 650 V 4A Schottky silicon carbide DPAK
STPSC4H065B-TR Schottky Diodes & Rectifiers 650 V 4A Schottky silicon carbide DPAK
STPSC4H065B-TR-CUT TAPE 全新原裝
STPSC4H065B 全新原裝
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