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| PartNumber | STQ1HNK60R-AP | STQ1HN60K3-AP |
| Description | MOSFET POWER MOSFET | MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 400 mA | 400 mA |
| Rds On Drain Source Resistance | 8.5 Ohms | 6.7 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 30 W | 3 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Height | 4.95 mm | - |
| Length | 4.95 mm | - |
| Series | STQ1HNK60R | STQ1HN60K3-AP |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.94 mm | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 25 ns | 31 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5 ns | 10 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 23 ns |
| Typical Turn On Delay Time | 6.5 ns | 7 ns |
| Unit Weight | 0.007760 oz | 0.007760 oz |
| Vgs th Gate Source Threshold Voltage | - | 3.75 V |
| Qg Gate Charge | - | 9.5 nC |
| Tradename | - | SuperMESH |
| Packaging | - | Ammo Pack |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STQ1HNK60R-AP | MOSFET POWER MOSFET | |
| STQ1HN60K3-AP | MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET | ||
| STQ1HN60K3-AP | MOSFET N-CH 600V 0.4A TO-92 | ||
| STQ1HNK60R-AP | MOSFET N-CH 600V 400MA TO-92 | ||
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| STQ1HNK60 | 全新原裝 | ||
| STQ1HNK60-R | 全新原裝 | ||
| STQ1HNK60R | 全新原裝 | ||
| STQ1HNK60R-AR | 全新原裝 | ||
| STQ1HNK60R-AT | 全新原裝 | ||
| STQ1HNK60RAP | 全新原裝 | ||
| STQ1HNK60Z | 全新原裝 |