STQ1NC45

STQ1NC45R-AP vs STQ1NC45 vs STQ1NC45R

 
PartNumberSTQ1NC45R-APSTQ1NC45STQ1NC45R
DescriptionMOSFET POWER MOSFET
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage450 V--
Id Continuous Drain Current500 mA--
Rds On Drain Source Resistance4.5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
SeriesSTQ1NC45R--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn On Delay Time6.7 ns--
Unit Weight0.007760 oz--
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STQ1NC45R-AP MOSFET POWER MOSFET
STQ1NC45R-AP MOSFET POWER MOSFET
STQ1NC45 全新原裝
STQ1NC45R 全新原裝
STQ1NC45RA 全新原裝
STQ1NC45RAP 全新原裝
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