 |  | |
| PartNumber | STT818B | STT800N16P55XPSA1 |
| Description | Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain | Discrete Semiconductor Modules THYR / DIODE MODULE DK |
| Manufacturer | STMicroelectronics | Infineon |
| Product Category | Bipolar Transistors - BJT | Discrete Semiconductor Modules |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-6 | BG-PS55-1 |
| Transistor Polarity | PNP | N-Channel |
| Configuration | Single | Dual |
| Collector Emitter Voltage VCEO Max | - 30 V | - |
| Collector Base Voltage VCBO | - 30 V | - |
| Emitter Base Voltage VEBO | - 5 V | - |
| Collector Emitter Saturation Voltage | - 0.21 V | - |
| Maximum DC Collector Current | 3 A | - |
| Minimum Operating Temperature | - 65 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 125 C |
| Series | STT818B | - |
| Height | 1.3 mm | - |
| Length | 3.05 mm | - |
| Packaging | Reel | Tray |
| Width | 1.75 mm | - |
| Brand | STMicroelectronics | Infineon Technologies |
| Continuous Collector Current | - 3 A | - |
| Pd Power Dissipation | 1200 mW | - |
| Product Type | BJTs - Bipolar Transistors | Discrete Semiconductor Modules |
| Factory Pack Quantity | 3000 | 1 |
| Subcategory | Transistors | Discrete Semiconductor Modules |
| Unit Weight | 0.000229 oz | - |
| Product | - | Diode Power Modules |
| Type | - | Soft Starter |
| Gate Trigger Current Igt | - | 200 mA |
| Holding Current Ih Max | - | 300 mA |
| Vgs th Gate Source Threshold Voltage | - | 0.9 V |
| Part # Aliases | - | SP001630156 STT800N16P55 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STT818B | Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain | |
| STT818B | Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain | ||
Infineon Technologies |
STT800N16P55XPSA1 | Discrete Semiconductor Modules THYR / DIODE MODULE DK | |
| STT800N16P55XPSA1 | SCR MODULE POWERBLOCK PS55-1 | ||
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