STY11

STY112N65M5 vs STY112N65M5 112N65M5 vs STY11V

 
PartNumberSTY112N65M5STY112N65M5 112N65M5STY11V
DescriptionMOSFET N-Channel 650V 93A 0.019 Ohm Mdmesh M5
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseMax247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current96 A--
Rds On Drain Source Resistance19 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge350 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation625 W--
ConfigurationSingle--
TradenameMDmesh--
PackagingTube--
SeriesSTY112N65M5--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Product TypeMOSFET--
Factory Pack Quantity600--
SubcategoryMOSFETs--
Unit Weight1.340411 oz--
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
STY112N65M5 MOSFET N-Channel 650V 93A 0.019 Ohm Mdmesh M5
STY112N65M5 MOSFET N-CH 650V 93A MAX247
STY112N65M5 112N65M5 全新原裝
STY11V 全新原裝
Top