 |  | | |
| PartNumber | SUM60030E-GE3 | SUM60020E-GE3 | SUM60N02-3M9P-E3 |
| Description | MOSFET N-Channel 80V (D-S) TrenchFET | MOSFET N-Channel 80 V (D-S) MOSFET | MOSFET 20V 60A 120W 3.9mohm @ 10V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | E |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Tube | Reel |
| Series | SUM | - | SUM |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.068654 oz | - | 0.050717 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | TO-263-4 | TO-263-3 |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Id Continuous Drain Current | - | 150 A | - |
| Rds On Drain Source Resistance | - | 2.47 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 151.2 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 375 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 15 ns | - |
| Rise Time | - | 13 ns | - |
| Typical Turn Off Delay Time | - | 50 ns | - |
| Typical Turn On Delay Time | - | 30 ns | - |
| Height | - | - | 4.83 mm |
| Length | - | - | 10.67 mm |
| Width | - | - | 9.65 mm |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUM60030E-GE3 | MOSFET N-Channel 80V (D-S) TrenchFET | |
| SUM65N20-30-E3 | MOSFET 200V 65A 375W 30mohm @ 10V | ||
| SUM60020E-GE3 | MOSFET N-Channel 80 V (D-S) MOSFET | ||
| SUM60N10-17-E3 | MOSFET 100V 60A 150W | ||
| SUM60N04-06T-E3 | MOSFET 40V 60A 200W w/Sensing Diode | ||
| SUM60N04-05T-E3 | MOSFET 40V 60A 200W w/Sensing Diode | ||
| SUM60N02-3M9P-E3 | MOSFET 20V 60A 120W 3.9mohm @ 10V | ||
Vishay |
SUM60N02-3M9P-E3 | IGBT Transistors MOSFET 20V 60A 120W 3.9mohm @ 10V | |
| SUM60030E-GE3 | MOSFET N-CH 80V 120A D2PAK | ||
| SUM60N10-17-E3 | MOSFET N-CH 100V 60A D2PAK | ||
| SUM65N20-30-E3 | MOSFET N-CH 200V 65A D2PAK | ||
| SUM60N04-05T-E3 | RF Bipolar Transistors MOSFET 40V 60A 200W w/Sensing Diode | ||
| SUM60N04-06T-E3 | RF Bipolar Transistors MOSFET 40V 60A 200W w/Sensing Diode | ||
| SUM60N10-17-E3-CUT TAPE | 全新原裝 | ||
| SUM65N20-30-E3-CUT TAPE | 全新原裝 | ||
| SUM60N02-3M9P | 全新原裝 | ||
| SUM60N03-05C | 全新原裝 | ||
| SUM60N04 | 全新原裝 | ||
| SUM60N04-05C | 全新原裝 | ||
| SUM60N04-05LT | MOSFET 40V 60A 200W w/Sensing Diode | ||
| SUM60N04-06T | 全新原裝 | ||
| SUM60N04-12 | 全新原裝 | ||
| SUM60N04-12L | 全新原裝 | ||
| SUM60N04-12L7 | 全新原裝 | ||
| SUM60N04-12LT | MOSFET 40V 60A 110W | ||
| SUM60N04-12LT-E3 | MOSFET 40V 60A 110W | ||
| SUM60N04-1ZL | 全新原裝 | ||
| SUM60N06-15 | MOSFET Transistor, N-Channel, TO-263AB | ||
| SUM60N06-15-E3 | Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SUM60N06-15-E3) | ||
| SUM60N0615E3 | 全新原裝 | ||
| SUM60N08 | 全新原裝 | ||
| SUM60N08-07 | 全新原裝 | ||
| SUM60N08-07C | 全新原裝 | ||
| SUM60N08-07T | 全新原裝 | ||
| SUM60N10 | 全新原裝 | ||
| SUM60N10-17 | 60 A, 100 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 | ||
| SUM60N10-17-E3 PB-FREE | 全新原裝 | ||
| SUM60N10-17-GE3 | 全新原裝 | ||
| SUM60N10-17E3 | 全新原裝 | ||
| SUM60N1017E3 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SUM60P05 | 全新原裝 | ||
| SUM60P05-11LT | MOSFET 55V 60A 200W | ||
| SUM60P0511LT | 全新原裝 | ||
| SUM65N20 | 全新原裝 | ||
| SUM65N20--30-E3 | 全新原裝 | ||
| SUM65N20-30 | N-CH 200V 65A 30mOhm TO263 | ||
| SUM65N2030E3 | 全新原裝 | ||
| SUM65P06-20 | 全新原裝 | ||
| SUM6600HR | 全新原裝 | ||
| SUM6K1N | 全新原裝 |