 |  | | |
| PartNumber | TC58NVG2S3ETA00 | TC58NVG2S3ETA00 K9GAG08U | TC58NVG2S3ETA00 K9GAG08UOM-PCBO MT29F64G08CBA |
| Description | NAND Flash 3.3V 4Gb 43nm SLC NAND (EEPROM) | ||
| Manufacturer | Toshiba | - | - |
| Product Category | NAND Flash | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-48 | - | - |
| Memory Size | 4 Gbit | - | - |
| Interface Type | Parallel | - | - |
| Organization | 512 M x 8 | - | - |
| Timing Type | Synchronous | - | - |
| Data Bus Width | 8 bit | - | - |
| Supply Voltage Min | 2.7 V | - | - |
| Supply Voltage Max | 3.6 V | - | - |
| Supply Current Max | 30 mA | - | - |
| Minimum Operating Temperature | 0 C | - | - |
| Maximum Operating Temperature | + 70 C | - | - |
| Packaging | Tray | - | - |
| Memory Type | NAND | - | - |
| Product | NAND Flash | - | - |
| Speed | 25 ns | - | - |
| Architecture | Block Erase | - | - |
| Brand | Toshiba Memory | - | - |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | NAND Flash | - | - |
| Factory Pack Quantity | 96 | - | - |
| Subcategory | Memory & Data Storage | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58NVG2S3ETA00 | NAND Flash 3.3V 4Gb 43nm SLC NAND (EEPROM) | |
| TC58NVG2S3ETA00 K9GAG08U | 全新原裝 | ||
| TC58NVG2S3ETA00 K9GAG08UOM-PCBO MT29F64G08CBA | 全新原裝 | ||
| TC58NVG2S3ETA00. | 全新原裝 | ||
| TC58NVG2S3ETA00B3-H- | 全新原裝 | ||
| TC58NVG2S3ETA00B3H | Flash SLC NAND Serial 3.3V 4Gbit 512M x 8bit 48-Pin TSOP-I (Alt: TC58NVG2S3ETA00B3H) | ||
| TC58NVG2S3ETA00BBH | 全新原裝 | ||
| TC58NVG2S3ETA00TP | 全新原裝 | ||
| TC58NVG2S3ETA00_TRAY | 全新原裝 | ||
| TC58NVG2S3ETA00 | Flash Memory 4Gb 3.3V SLC NAND Flash Serial EEPROM |