 |  | | |
| PartNumber | TC58NYG2S0HBAI4 | TC58NYG2S0FBAI4 | TC58NYG2S0HBAI4-ND |
| Description | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | NAND Flash | Memory | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TFBGA-63 | - | - |
| Memory Size | 4 Gbit | - | - |
| Interface Type | Parallel | - | - |
| Organization | 512 M x 8 | - | - |
| Timing Type | Synchronous | - | - |
| Data Bus Width | 8 bit | - | - |
| Supply Voltage Min | 1.7 V | - | - |
| Supply Voltage Max | 1.95 V | - | - |
| Supply Current Max | 30 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Packaging | Tray | - | - |
| Memory Type | NAND | - | - |
| Product | NAND Flash | - | - |
| Speed | 25 ns | - | - |
| Architecture | Block Erase | - | - |
| Brand | Toshiba Memory | - | - |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | NAND Flash | - | - |
| Factory Pack Quantity | 210 | - | - |
| Subcategory | Memory & Data Storage | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58NYG2S0HBAI6 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | |
| TC58NYG2S0HBAI4 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | ||
| TC58NYG2S3EBAI5 | NAND Flash 1.8V 4Gb 43nm SLC NAND (EEPROM) | ||
| TC58NYG2S0FBAI4 | 全新原裝 | ||
| TC58NYG2S3ETAI0 | 全新原裝 | ||
| TC58NYG2S3ETAI0B3H | 全新原裝 | ||
| TC58NYG2S3ETAIO | 全新原裝 | ||
| TC58NYG2S0HBAI6 | EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM | ||
| TC58NYG2S0HBAI4 | Flash Memory 4Gb 1.8V SLC NAND Flash Serial EEPROM | ||
| TC58NYG2S3EBAI5 | Flash Memory 8Gb 1.8V SLC NAND Flash Serial EEPROM | ||
| TC58NYG2S0HBAI4-ND | 全新原裝 | ||
| TC58NYG2S0HBAI6-ND | 全新原裝 |