 |  | | |
| PartNumber | TK14G65W,RQ | TK14G65W | TK14G65W5 |
| Description | MOSFET Power MOSFET N-Channel | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 13.7 A | - | - |
| Rds On Drain Source Resistance | 220 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 35 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 130 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 10.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK14G65W | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 110 ns | - | - |
| Typical Turn On Delay Time | 60 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK14G65W,RQ | MOSFET Power MOSFET N-Channel | |
| TK14G65W5,RQ | MOSFET Power MOSFET N-Channel | ||
| TK14G65W | 全新原裝 | ||
| TK14G65W5 | 全新原裝 | ||
| TK14G65W5,RQ | X35 PB-F POWER MOSFET TRANSIST | ||
| TK14G65W5,RQ(S | Trans MOSFET N-CH 650V 13.7A 3-Pin D2PAK Embossed T/R (Alt: TK14G65W5,RQ(S) | ||
| TK14G65W5RQ | 全新原裝 | ||
| TK14G65W5RQ(S | 全新原裝 | ||
| TK14G65WRQ(S | 全新原裝 | ||
| TK14G65W5RQCT-ND | 全新原裝 | ||
| TK14G65W5RQDKR-ND | 全新原裝 | ||
| TK14G65W5RQTR-ND | 全新原裝 | ||
| TK14G65WRQCT-ND | 全新原裝 | ||
| TK14G65WRQDKR-ND | 全新原裝 | ||
| TK14G65WRQTR-ND | 全新原裝 |