 |  | | |
| PartNumber | TK17E80W,S1X | TK17E80W,S1X(S | TK17E80WS1X |
| Description | MOSFET N-Ch 800V 2050pF 32nC 17A 180W | MOSFET PWR MSFT TRANS TO-220AB(OS) | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Rds On Drain Source Resistance | 250 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 32 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 180 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Series | TK17E80W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 80 ns | - | - |
| Typical Turn On Delay Time | 58 ns | - | - |
| Unit Weight | 0.063493 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK17E80W,S1X | MOSFET N-Ch 800V 2050pF 32nC 17A 180W | |
| TK17E80W,S1X(S | 全新原裝 | ||
| TK17E80WS1X | MOSFET PWR MSFT TRANS TO-220AB(OS) | ||
| TK17E80WS1X(S | Trans MOSFET N-CH 800V 17A 3-Pin TO-220 Tube (Alt: TK17E80W,S1X(S) | ||
| TK17E80WS1X-ND | 全新原裝 |