| PartNumber | TK20E60W,S1VX | TK20E60U,S1X(S |
| Description | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | MOSFET N-Ch MOS 20A 600V 190W 1470pF 0.19 |
| Manufacturer | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 20 A | 20 A |
| Rds On Drain Source Resistance | 130 mOhms | 190 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - |
| Vgs Gate Source Voltage | 30 V | - |
| Qg Gate Charge | 48 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 165 W | 190 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | DTMOSIV | DTMOSIV |
| Height | 15.1 mm | 15.1 mm |
| Length | 10.16 mm | 10.16 mm |
| Series | TK20E60W | TK20E60U |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.45 mm | 4.45 mm |
| Brand | Toshiba | Toshiba |
| Fall Time | 6 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 25 ns | - |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns | - |
| Typical Turn On Delay Time | 50 ns | - |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Packaging | - | Tube |