PartNumber | TK39J60W,S1VQ | TK39A60W,S4VX | TK39J60W5,S1VQ |
Description | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-3PN-3 | TO-220FP-3 | TO-3PN-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 38.8 A | 38.8 A | 38.8 A |
Rds On Drain Source Resistance | 65 mOhms | 55 mOhms | 55 mOhms |
Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
Qg Gate Charge | 135 nC | 110 nC | 110 nC |
Pd Power Dissipation | 270 W | 50 W | 270 W |
Configuration | Single | Single | Single |
Height | 20 mm | 15 mm | 20 mm |
Length | 15.5 mm | 10 mm | 15.5 mm |
Series | TK39J60W | TK39A60W | TK39J60W5 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.5 mm | 4.5 mm | 4.5 mm |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 25 | 50 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.245577 oz | 0.211644 oz | 0.245577 oz |
Vgs th Gate Source Threshold Voltage | - | 3.7 V | 3.7 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Channel Mode | - | Enhancement | Enhancement |
Tradename | - | DTMOSIV | - |
Packaging | - | Reel | - |
Fall Time | - | 9 ns | 9 ns |
Rise Time | - | 50 ns | 50 ns |
Typical Turn Off Delay Time | - | 200 ns | 200 ns |
Typical Turn On Delay Time | - | 80 ns | 80 ns |