PartNumber | TK40E06N1,S1X | TK40A10N1,S4X | TK40E10K3,S1X(S |
Description | MOSFET 100V N-Ch PWR FET 60A 67W 23nC | MOSFET MOSFET NCh6.8ohm VGS10V10uAVDS100V | MOSFET N-Ch MOS 40A 100V 147W 4000pF 0.015 |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220FP-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 100 V | 100 V |
Id Continuous Drain Current | 60 A | 40 A | 40 A |
Rds On Drain Source Resistance | 10.4 mOhms | 6.8 mOhms | 15 mOhms |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 23 nC | 49 nC | - |
Pd Power Dissipation | 67 W | 35 W | 147 W |
Configuration | Single | Single | Single |
Height | 15.1 mm | 15 mm | 15.1 mm |
Length | 10.16 mm | 10 mm | 10.16 mm |
Series | TK40E06N1 | TK40A10N1 | TK40E10K3 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.45 mm | 4.5 mm | 4.45 mm |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |