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| PartNumber | TK4A60D(STA4,Q,M) | TK4A60DB(STA4,Q,M) | TK4A60DA(STA4,Q,M) |
| Description | MOSFET N-Ch FET 600V 2.5s IDSS 10 uA | MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm | MOSFET N-ch 600V 3.5A TO-220SIS |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 4 A | 3.7 A | 3.5 A |
| Rds On Drain Source Resistance | 1.7 Ohms | 2.2 Ohms | 1.7 Ohms |
| Configuration | Single | Single | Single |
| Height | 15 mm | 15 mm | 15 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | TK4A60D | TK4A60DB | TK4A60DA |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Pd Power Dissipation | - | 25 W | 35 W |
| Unit Weight | - | 0.211644 oz | - |
| Vgs th Gate Source Threshold Voltage | - | - | 4.4 V |
| Vgs Gate Source Voltage | - | - | 30 V |
| Qg Gate Charge | - | - | 11 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Channel Mode | - | - | Enhancement |
| Forward Transconductance Min | - | - | 0.6 S |
| Fall Time | - | - | 8 ns |
| Rise Time | - | - | 18 ns |
| Typical Turn Off Delay Time | - | - | 55 ns |
| Typical Turn On Delay Time | - | - | 40 ns |
