TK4R3E

TK4R3E06PL,S1X vs TK4R3E06PL vs TK4R3E06PLS1X-ND

 
PartNumberTK4R3E06PL,S1XTK4R3E06PLTK4R3E06PLS1X-ND
DescriptionMOSFET N-Ch 60V 3280pF 48.2nC 106A 87WMOSFET POWER N-CH TO220, TU
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current106 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge48.2 nC--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation87 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height15.1 mm--
Length10.16 mm--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Fall Time18 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.063493 oz--
製造商 型號 描述 RFQ
Toshiba
Toshiba
TK4R3E06PL,S1X MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W
TK4R3E06PL MOSFET POWER N-CH TO220, TU
TK4R3E06PLS1X-ND 全新原裝
Top