 |  | | |
| PartNumber | TK56E12N1,S1X | TK56E12N1 | TK56E12N1 K56E12N1 |
| Description | MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Id Continuous Drain Current | 112 A | - | - |
| Rds On Drain Source Resistance | 5.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 69 nC | - | - |
| Pd Power Dissipation | 168 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 15.1 mm | - | - |
| Length | 10.16 mm | - | - |
| Series | TK56E12N1 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.45 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 23 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 73 ns | - | - |
| Typical Turn On Delay Time | 45 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK56E12N1,S1X | MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | |
| TK56E12N1,S1X | IGBT Transistors MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | ||
| TK56E12N1S1XS | 全新原裝 | ||
| TK56E12N1 | 全新原裝 | ||
| TK56E12N1 K56E12N1 | 全新原裝 | ||
| TK56E12N1,S1X(S | 全新原裝 | ||
| TK56E12N1S1X | Trans MOSFET N 120V 112A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK56E12N1,S1X) | ||
| TK56E12N1S1X(S | 全新原裝 | ||
| TK56E12N1S1X-ND | 全新原裝 |