 |  | | |
| PartNumber | TK58A06N1,S4X | TK58A06M | TK58A06N1 |
| Description | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 58 A | - | - |
| Rds On Drain Source Resistance | 4.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 46 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK58A06N1 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK58E06N1,S1X | MOSFET 60V N-Ch PWR FET 105A 110W 46nC | |
| TK58A06N1,S4X | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | ||
| TK58A06N1,S4X | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | ||
| TK58E06N1,S1X | MOSFET 60V N-Ch PWR FET 105A 110W 46nC | ||
| TK58A06M | 全新原裝 | ||
| TK58A06N1 | 全新原裝 | ||
| TK58A06N1,S4X(S | 全新原裝 | ||
| TK58A06N1S4X | MOSFET MOSFET TRAN TO-220SIS | ||
| TK58A06N1S4X(S | 全新原裝 | ||
| TK58A06N1S4XS | 全新原裝 | ||
| TK58E06N1 | MOSFET N-CH 60V 58A U-MOS TO220, PK | ||
| TK58E06N1 S1X(S | 全新原裝 | ||
| TK58E06N1S1X | Trans MOSFET N 60V 105A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK58E06N1,S1X) | ||
| TK58E06N1S1X(S | 全新原裝 | ||
| TK58A06N1S4X-ND | 全新原裝 | ||
| TK58E06N1S1X-ND | 全新原裝 |