TK5A60W,S

TK5A60W,S4VX vs TK5A60W,S4VX(M

 
PartNumberTK5A60W,S4VXTK5A60W,S4VX(M
DescriptionMOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC
ManufacturerToshiba-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-220FP-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current5.4 A-
Rds On Drain Source Resistance770 mOhms-
Vgs th Gate Source Threshold Voltage3.7 V-
Vgs Gate Source Voltage30 V-
Qg Gate Charge10.5 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation30 W-
ConfigurationSingle-
Channel ModeEnhancement-
Height15 mm-
Length10 mm-
SeriesTK5A60W-
Transistor Type1 N-Channel-
Width4.5 mm-
BrandToshiba-
Fall Time7 ns-
Product TypeMOSFET-
Rise Time18 ns-
Factory Pack Quantity50-
SubcategoryMOSFETs-
Typical Turn Off Delay Time50 ns-
Typical Turn On Delay Time40 ns-
Unit Weight0.211644 oz-
製造商 型號 描述 RFQ
Toshiba
Toshiba
TK5A60W,S4VX MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC
TK5A60W,S4VX Darlington Transistors MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC
TK5A60W,S4VX(M 全新原裝
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