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| PartNumber | TK6A60W,S4VX | TK6A60W,S4VX(M) | TK6A60W,S4VX(M |
| Description | MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC | MOSFETs | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 6.2 A | - | - |
| Rds On Drain Source Resistance | 680 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK6A60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK6A60W,S4VX | MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC | |
| TK6A60W,S4VX | IGBT Transistors MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC | ||
| TK6A60W,S4VX(M) | MOSFETs | ||
| TK6A60W,S4VX(M | 全新原裝 |