TP65 stock, TP65, TP65H035WSQA


PartNumber	TP65H035WSQA	TP65H035WS	TP65H050WS
Description	MOSFET GAN FET 650V 47.2A TO247	MOSFET GAN FET 650V 46.5A TO247	MOSFET GAN FET 650V 34A TO247
Manufacturer	Transphorm	Transphorm	Transphorm
Product Category	MOSFET	MOSFET	MOSFET
Technology	GaN Si	GaN Si	GaN Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	650 V	650 V	650 V
Id Continuous Drain Current	47.2 A	46.5 A	36 A
Rds On Drain Source Resistance	41 mOhms	41 mOhms	60 mOhms
Vgs th Gate Source Threshold Voltage	3.4 V	3.3 V	3.3 V
Vgs Gate Source Voltage	20 V	20 V	20 V
Qg Gate Charge	24 nC	36 nC	24 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 150 C	+ 150 C
Pd Power Dissipation	187 W	156 W	119 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Brand	Transphorm	Transphorm	Transphorm
Fall Time	12 ns	11.5 ns	11 ns
Moisture Sensitive	Yes	Yes	Yes
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	14 ns	13.5 ns	11 ns
Factory Pack Quantity	30	30	30
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	98 ns	98.5 ns	86 ns
Typical Turn On Delay Time	69 ns	69 ns	51 ns

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TP65