TPH6R3

TPH6R30ANL,L1Q vs TPH6R30ANL vs TPH6R30ANL,L1Q(M

 
PartNumberTPH6R30ANL,L1QTPH6R30ANLTPH6R30ANL,L1Q(M
DescriptionMOSFET U-MOSVIII-H 100V 66A 55nC MOSFET
ManufacturerToshiba--
Product CategoryMOSFET--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current66 A--
Rds On Drain Source Resistance5.1 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge55 nC--
Minimum Operating Temperature---
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation54 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesTPH6R30ANL--
Transistor Type1 N-Channel--
BrandToshiba--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time58 ns--
Typical Turn On Delay Time18 ns--
製造商 型號 描述 RFQ
Toshiba
Toshiba
TPH6R30ANL,L1Q MOSFET U-MOSVIII-H 100V 66A 55nC MOSFET
TPH6R30ANLL1Q-ND 全新原裝
TPH6R30ANL 全新原裝
TPH6R30ANL,L1Q(M 全新原裝
TPH6R30ANLL1Q(M 全新原裝
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