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| PartNumber | TRS8E65C,S1Q | TRS8E65C | TRS8E65C-S1AQ |
| Description | Schottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 8A | ||
| Manufacturer | Toshiba Semiconductor and Storage | - | - |
| Product Category | Diodes, Rectifiers - Single | - | - |
| Series | - | - | - |
| Packaging | Tube | - | - |
| Package Case | TO-220-2 | - | - |
| Mounting Type | Through Hole | - | - |
| Supplier Device Package | TO-220-2L | - | - |
| Speed | Fast Recovery = 200mA (Io) | - | - |
| Diode Type | Silicon Carbide Schottky | - | - |
| Current Reverse Leakage Vr | 90μA @ 650V | - | - |
| Voltage Forward Vf Max If | 1.7V @ 8A | - | - |
| Voltage DC Reverse Vr Max | 650V | - | - |
| Current Average Rectified Io | 8A (DC) | - | - |
| Reverse Recovery Time trr | - | - | - |
| Capacitance Vr F | 44pF @ 650V, 1MHz | - | - |
| Operating Temperature Junction | 175°C (Max) | - | - |