TSM4

TSM4953DCS RLG vs TSM4946DCS RLG vs TSM4N60ECH C5G

 
PartNumberTSM4953DCS RLGTSM4946DCS RLGTSM4N60ECH C5G
DescriptionMOSFET Dual 30V P channel MosfetMOSFET Dual 30V N Channel MosfetMOSFET 600V, 4Amp, 2,5ohm N channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseSOP-8SOP-8TO-251-3
Number of Channels2 Channel1 Channel1 Channel
Transistor PolarityP-Channel, PNPN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V60 V600 V
Id Continuous Drain Current4.9 A4.5 A4 A
Rds On Drain Source Resistance50 mOhms45 mOhms2 Ohms
Vgs th Gate Source Threshold Voltage1.5 V1 V3 V
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge28 nC19 nC12 nC
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.5 W2.4 W86.2 W
ConfigurationDualSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelTube
Transistor Type2 P-Channel2 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time40 ns11 ns21 ns
Moisture SensitiveYes--
Product TypeMOSFETMOSFETMOSFET
Rise Time15 ns11 ns27 ns
Factory Pack Quantity250025003750
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time75 ns36 ns47 ns
Typical Turn On Delay Time9 ns13 ns18 ns
Forward Transconductance Min-13 S-
Unit Weight-0.030018 oz0.011993 oz
製造商 型號 描述 RFQ
Taiwan Semiconductor
Taiwan Semiconductor
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