TSM4NB60CP

TSM4NB60CP ROG vs TSM4NB60CP RO vs TSM4NB60CPRO

 
PartNumberTSM4NB60CP ROGTSM4NB60CP ROTSM4NB60CPRO
DescriptionMOSFET 600V N channel MosfetMOSFET 600V N channl MosfetN-CHANNEL MOSFET 600V 4A TO-252, RL
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current4 A4 A-
Rds On Drain Source Resistance2.2 Ohms2.5 Ohms-
Vgs th Gate Source Threshold Voltage3.5 V2.5 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge14.5 nC14.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation50 W50 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan SemiconductorTaiwan Semiconductor-
Fall Time19 ns19 ns-
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Rise Time20 ns20 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns30 ns-
Typical Turn On Delay Time11 ns11 ns-
Unit Weight0.011993 oz0.139332 oz-
Forward Transconductance Min-2.6 S-
製造商 型號 描述 RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM4NB60CP ROG MOSFET 600V N channel Mosfet
TSM4NB60CP RO MOSFET 600V N channl Mosfet
TSM4NB60CP ROG Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R
TSM4NB60CP RO MOSFET 600V N channl Mosfet
TSM4NB60CPROG Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
TSM4NB60CPRO N-CHANNEL MOSFET 600V 4A TO-252, RL
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