 | |  | |
| PartNumber | TSM4ND65CI C0G | TSM4ND60CI C0G | TSM4ND60CI RLG |
| Description | MOSFET 650V 4A Single NChnl Power MOSFET | MOSFET 600V 4A Single NChnl Power MOSFET | MOSFET 600V 4A Single N-Chan Pwr MOSFET |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | ITO-220-3 | ITO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V | 600 V |
| Id Continuous Drain Current | 4 A | 4 A | 4 A |
| Rds On Drain Source Resistance | 2.6 Ohms | - | 2.2 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 16.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 41.6 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Series | TSM4ND65CI | TSM4ND60CI | TSM |
| Transistor Type | 1 N-Channel | 1 N-Channel | Single N-Channel Power MOSFET |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 19 ns | - | - |
| Factory Pack Quantity | 2000 | 2000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM4ND65CI C0G | MOSFET 650V 4A Single NChnl Power MOSFET | |
| TSM4ND60CI C0G | MOSFET 600V 4A Single NChnl Power MOSFET | ||
| TSM4ND65CI RLG | MOSFET 650V 4A Single N-Chan Pwr MOSFET | ||
| TSM4ND60CI RLG | MOSFET 600V 4A Single N-Chan Pwr MOSFET | ||
| TSM4ND50CPRO | 全新原裝 |