 |  | | |
| PartNumber | TTA1943(Q) | TTA1943(Q)-ND | TTA1943(Q)+TTC5200(Q) |
| Description | Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | 2-21F1A-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 230 V | - | - |
| Collector Base Voltage VCBO | - 230 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 3 V | - | - |
| Maximum DC Collector Current | - 15 A | - | - |
| Gain Bandwidth Product fT | 30 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | TTA1943 | - | - |
| DC Current Gain hFE Max | 160 | - | - |
| Packaging | Bulk | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | - 15 A | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.194007 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TTA1943(Q) | Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V | |
| TTA1943(Q) | Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V | ||
| TTA1943(Q)-ND | 全新原裝 | ||
| TTA1943(Q)+TTC5200(Q) | 全新原裝 |