UMG7N

UMG7NTR vs UMG7N

 
PartNumberUMG7NTRUMG7N
DescriptionBipolar Transistors - Pre-Biased TRANS DIGI BJT PNP 50V 100MA 6PIN
ManufacturerROHM SemiconductorRohm Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased
RoHSY-
ConfigurationDual-
Transistor PolarityNPN-
Typical Input Resistor10 kOhms-
Typical Resistor Ratio10-
Mounting StyleSMD/SMT-
Package / CaseUMT-5-
DC Collector/Base Gain hfe Min100-
Maximum Operating Frequency250 MHz-
Collector Emitter Voltage VCEO Max50 V-
Continuous Collector Current100 mA-
Pd Power Dissipation150 mW-
Maximum Operating Temperature+ 150 C-
SeriesUMG7N-
PackagingReelTape & Reel (TR)
Emitter Base Voltage VEBO5 V-
BrandROHM Semiconductor-
Maximum DC Collector Current100 mA-
Product TypeBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity3000-
SubcategoryTransistors-
Package Case-5-TSSOP, SC-70-5, SOT-353
Mounting Type-Surface Mount
Supplier Device Package-UMT5
Power Max-150mW
Transistor Type-2 NPN - Pre-Biased (Dual)
Current Collector Ic Max-100mA
Voltage Collector Emitter Breakdown Max-50V
Resistor Base R1 Ohms-10k
Resistor Emitter Base R2 Ohms--
DC Current Gain hFE Min Ic Vce-100 @ 1mA, 5V
Vce Saturation Max Ib Ic-300mV @ 1mA, 10mA
Current Collector Cutoff Max-500nA (ICBO)
Frequency Transition-250MHz
製造商 型號 描述 RFQ
UMG7NTR Bipolar Transistors - Pre-Biased TRANS DIGI BJT PNP 50V 100MA 6PIN
UMG7N 全新原裝
UMG7NTR TRANS 2NPN PREBIAS 0.15W UMT5
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