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| PartNumber | US6M1TR |
| Description | MOSFET N+P 30 20V 1A |
| Manufacturer | ROHM Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-363T-6 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V |
| Id Continuous Drain Current | 1.4 A |
| Rds On Drain Source Resistance | 170 mOhms |
| Vgs Gate Source Voltage | 20 V |
| Qg Gate Charge | 1.4 nC, 2.1 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 1 W |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Height | 0.77 mm |
| Length | 2 mm |
| Series | US6M1 |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Type | MOSFET |
| Width | 1.7 mm |
| Brand | ROHM Semiconductor |
| Forward Transconductance Min | 1 S, 0.7 S |
| Fall Time | 8 nS, 10 nS |
| Product Type | MOSFET |
| Rise Time | 6 nS, 8 nS |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 13 nS, 25 nS |
| Typical Turn On Delay Time | 6 nS, 9 nS |
| Part # Aliases | US6M1 |
| Unit Weight | 0.000265 oz |