US6T8

US6T8TR vs US6T8 vs US6T8 TR

 
PartNumberUS6T8TRUS6T8US6T8 TR
DescriptionBipolar Transistors - BJT PNP+PNP -12VCEO-1.5A SOT-363T
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-363T-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max- 12 V--
Collector Base Voltage VCBO- 15 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage- 85 mV--
Maximum DC Collector Current- 1.5 A--
Gain Bandwidth Product fT400 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max680--
Height0.77 mm--
Length2 mm--
PackagingReel--
Width1.7 mm--
BrandROHM Semiconductor--
Continuous Collector Current- 1.5 A--
DC Collector/Base Gain hfe Min270--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUS6T8--
製造商 型號 描述 RFQ
US6T8TR Bipolar Transistors - BJT PNP+PNP -12VCEO-1.5A SOT-363T
US6T8 全新原裝
US6T8 TR 全新原裝
US6T8TR PNP+PNP DRIVER TRANSISTOR
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