 | |  | |
| PartNumber | VB10150S-E3 | VB10150S-E3-8W | VB10150S-E3/4W |
| Description | Schottky Diodes & Rectifiers 10 Amp 150 Volt Single TrenchMOS | ||
| Manufacturer | VISHAY | - | Vishay Semiconductor Diodes Division |
| Product Category | Diodes, Rectifiers - Single | - | Diodes, Rectifiers - Single |
| Series | - | - | TMBSR |
| Product | - | - | Schottky Rectifiers |
| Packaging | - | - | Tube Alternate Packaging |
| Unit Weight | - | - | 0.048678 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | TMBS |
| Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Technology | - | - | Si |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | TO-263AB |
| Configuration | - | - | Single |
| Speed | - | - | Fast Recovery = 200mA (Io) |
| Diode Type | - | - | Schottky |
| Current Reverse Leakage Vr | - | - | 150μA @ 150V |
| Voltage Forward Vf Max If | - | - | 1.2V @ 10A |
| Voltage DC Reverse Vr Max | - | - | 150V |
| Current Average Rectified Io | - | - | 10A |
| Reverse Recovery Time trr | - | - | - |
| Capacitance Vr F | - | - | - |
| Operating Temperature Junction | - | - | -55°C ~ 150°C |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vf Forward Voltage | - | - | 1.2 V |
| Ir Reverse Current | - | - | 150 uA |
| If Forward Current | - | - | 10 A |
| Vrrm Repetitive Reverse Voltage | - | - | 150 V |
| Ifsm Forward Surge Current | - | - | 120 A |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay Semiconductors |
VB10150S-E3/8W | Schottky Diodes & Rectifiers 10 Amp 150 Volt Single TrenchMOS | |
| VB10150S-E3 | 全新原裝 | ||
| VB10150S-E3-8W | 全新原裝 | ||
Vishay |
VB10150S-E3/4W | Schottky Diodes & Rectifiers 10 Amp 150 Volt Single TrenchMOS | |
| VB10150S-E3/8W | Schottky Diodes & Rectifiers 10 Amp 150 Volt Single TrenchMOS |