 | | | |
| PartNumber | W947D2HBJX5E | W947D2HBJX5I | W947D2HBJX5E TR |
| Description | DRAM 128M mDDR, x32, 200MHz | DRAM 128M mDDR, x32, 200MHz, Industrial Temp | DRAM 128M mDDR, x32, 200MHz T&R |
| Manufacturer | Winbond | Winbond | Winbond |
| Product Category | DRAM | DRAM | DRAM |
| RoHS | Y | Y | Y |
| Type | SDRAM Mobile - LPDDR | SDRAM Mobile - LPDDR | SDRAM Mobile - LPDDR |
| Data Bus Width | 32 bit | 32 bit | 32 bit |
| Organization | 4 M x 32 | 4 M x 32 | 4 M x 32 |
| Package / Case | VFBGA-90 | VFBGA-90 | VFBGA-90 |
| Memory Size | 128 Mbit | 128 Mbit | 128 Mbit |
| Maximum Clock Frequency | 200 MHz | 200 MHz | 200 MHz |
| Supply Voltage Max | 1.95 V | 1.95 V | 1.95 V |
| Supply Voltage Min | 1.7 V | 1.7 V | 1.7 V |
| Supply Current Max | 40 mA | 40 mA | 40 mA |
| Minimum Operating Temperature | - 25 C | - 40 C | - 25 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Series | W947D2HB | W947D2HB | W947D2HB |
| Packaging | Tray | Tray | Reel |
| Brand | Winbond | Winbond | Winbond |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | DRAM | DRAM | DRAM |
| Factory Pack Quantity | 240 | 240 | 2500 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Winbond |
W947D6HBHX6E | DRAM 128M mDDR, x16, 166MHz, 65nm | |
| W947D6HBHX5E | DRAM 128M mDDR, x16, 200MHz | ||
| W947D6HBHX5I | DRAM 128M mDDR, x16, 200MHz, Industrial Temp | ||
| W947D6HBHX6E TR | DRAM 128M mDDR, x16, 166MHz, 65nm T&R | ||
| W947D2HBJX5E | DRAM 128M mDDR, x32, 200MHz | ||
| W947D2HBJX6E | DRAM 128M mDDR, x32, 166MHz, 65nm | ||
| W947D2HBJX5I | DRAM 128M mDDR, x32, 200MHz, Industrial Temp | ||
| W947D6HBHX5E TR | DRAM 128M mDDR, x16, 200MHz T&R | ||
| W947D6HBHX5I TR | DRAM 128M mDDR, x16, 200MHz, Industrial Temp T&R | ||
| W947D2HBJX5E TR | DRAM 128M mDDR, x32, 200MHz T&R | ||
| W947D2HBJX5I TR | DRAM 128M mDDR, x32, 200MHz, Industrial Temp T&R | ||
| W947D2HBJX6E TR | DRAM 128M mDDR, x32, 166MHz, 65nm T&R | ||
| W947D2HBJX5I | IC DRAM 128M PARALLEL 90VFBGA | ||
| W947D2HBJX6E | IC DRAM 128M PARALLEL 90VFBGA | ||
| W947D6HBHX5E TR | IC DRAM 128M PARALLEL 60VFBGA | ||
| W947D6HBHX6E TR | IC DRAM 128M PARALLEL 60VFBGA | ||
| W947D2HBJX5E TR | IC DRAM 128M PARALLEL 90VFBGA | ||
| W947D2HBJX5I TR | IC DRAM 128M PARALLEL 90VFBGA | ||
| W947D2HBJX6E TR | IC DRAM 128M PARALLEL 90VFBGA | ||
| W947D6HBHX5I TR | IC DRAM 128M PARALLEL 60VFBGA | ||
| W947D2HBJX-5I | 全新原裝 | ||
| W947D2HBJX5E | IC DRAM 128M PARALLEL 90VFBGA | ||
| W947D6HBHX-5E | 全新原裝 | ||
| W947D6HBHX5E | IC DRAM 128M PARALLEL 60VFBGA | ||
| W947D6HBHX5I | IC DRAM 128M PARALLEL 60VFBGA | ||
| W947D6HBHX6G | 全新原裝 | ||
| W947D6HBHX6E | IC DRAM 128M PARALLEL 60VFBGA |