W988D2FBJX7

W988D2FBJX7E vs W988D2FBJX7E TR vs W988D2FBJX7G

 
PartNumberW988D2FBJX7EW988D2FBJX7E TRW988D2FBJX7G
DescriptionDRAM 256M mSDR, x32, 133MHz, 65nmDRAM 256M mSDR, x32, 133MHz, 65nm T&R
ManufacturerWinbondWinbond-
Product CategoryDRAMDRAM-
RoHSYY-
TypeSDRAM Mobile - LPSDRSDRAM Mobile - LPSDR-
Data Bus Width32 bit32 bit-
Organization8 M x 328 M x 32-
Package / CaseVFBGA-90VFBGA-90-
Memory Size256 Mbit256 Mbit-
Maximum Clock Frequency133 MHz133 MHz-
Supply Voltage Max1.95 V1.95 V-
Supply Voltage Min1.7 V1.7 V-
Supply Current Max35 mA35 mA-
Minimum Operating Temperature- 25 C- 25 C-
Maximum Operating Temperature+ 85 C+ 85 C-
SeriesW988D2FBW988D2FB-
PackagingTrayReel-
BrandWinbondWinbond-
Mounting StyleSMD/SMTSMD/SMT-
Moisture SensitiveYesYes-
Product TypeDRAMDRAM-
Factory Pack Quantity2402500-
SubcategoryMemory & Data StorageMemory & Data Storage-
製造商 型號 描述 RFQ
Winbond
Winbond
W988D2FBJX7E DRAM 256M mSDR, x32, 133MHz, 65nm
W988D2FBJX7E TR DRAM 256M mSDR, x32, 133MHz, 65nm T&R
W988D2FBJX7E IC DRAM 256M PARALLEL 90VFBGA
W988D2FBJX7E TR IC DRAM 256M PARALLEL 90VFBGA
W988D2FBJX7G 全新原裝
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