ZTX658S stock, ZTX658S, ZTX658STZ


PartNumber	ZTX658STOA	ZTX658S	ZTX658STOB
Description	Bipolar Transistors - BJT NPN Super E-Line		Bipolar Transistors - BJT NPN Super E-Line
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Transistors - Bipolar (BJT) - RF	-
RoHS	Y	-	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-92-3	-	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	400 V	-	-
Collector Base Voltage VCBO	400 V	-	-
Emitter Base Voltage VEBO	5 V	-	-
Maximum DC Collector Current	0.5 A	0.5 A	-
Gain Bandwidth Product fT	50 MHz	50 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
DC Current Gain hFE Max	50 at 1 mA, 5 V	50 at 1 mA at 5 V	-
Height	4.01 mm	-	-
Length	4.77 mm	-	-
Packaging	Bulk	Reel	-
Width	2.41 mm	-	-
Brand	Diodes Incorporated	-	-
Continuous Collector Current	0.5 A	0.5 A	-
DC Collector/Base Gain hfe Min	50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V	-	-
Pd Power Dissipation	1 W	-	-
Product Type	BJTs - Bipolar Transistors	-	-
Factory Pack Quantity	2000	-	-
Subcategory	Transistors	-	-
Unit Weight	0.016000 oz	0.016000 oz	-
Series	-	ZTX658	-
Package Case	-	TO-92	-
Pd Power Dissipation	-	1 W	-
Collector Emitter Voltage VCEO Max	-	400 V	-
Collector Emitter Saturation Voltage	-	0.5 V	-
Collector Base Voltage VCBO	-	400 V	-
Emitter Base Voltage VEBO	-	5 V	-

Search Part Number : "ZTX658S", Match & Start with "ZTX658S" - Total : 6

製造商	型號	描述
Diodes Incorporated	ZTX658STZ	Bipolar Transistors - BJT NPN Super E-Line
Diodes Incorporated	ZTX658STOA	Bipolar Transistors - BJT NPN Super E-Line
	ZTX658S	全新原裝
	ZTX658STOA	Bipolar Junction Transistor, NPN Type, TO-92VAR
	ZTX658STOB	Bipolar Transistors - BJT NPN Super E-Line
	ZTX658STZ	Bipolar Transistors - BJT NPN Super E-Line

ZTX658S