ZX5T953G

ZX5T953GTA vs ZX5T953G vs ZX5T953GTADIODES

 
PartNumberZX5T953GTAZX5T953GZX5T953GTADIODES
DescriptionBipolar Transistors - BJT PNP 100V
ManufacturerDiodes IncorporatedZETEX-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO- 140 V--
Emitter Base Voltage VEBO- 7 V--
Maximum DC Collector Current5 A5 A-
Gain Bandwidth Product fT125 MHz125 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZX5T953ZX5T953-
Height1.65 mm--
Length6.7 mm--
PackagingReelCut Tape (CT) Alternate Packaging-
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 5 A- 5 A-
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz0.000282 oz-
Package Case-TO-261-4, TO-261AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-
Power Max-3W-
Transistor Type-PNP-
Current Collector Ic Max-5A-
Voltage Collector Emitter Breakdown Max-100V-
DC Current Gain hFE Min Ic Vce-100 @ 1A, 1V-
Vce Saturation Max Ib Ic-340mV @ 400mA, 4A-
Current Collector Cutoff Max-20nA (ICBO)-
Frequency Transition-125MHz-
Pd Power Dissipation-3 W-
Collector Emitter Voltage VCEO Max-100 V-
Collector Base Voltage VCBO-- 140 V-
Emitter Base Voltage VEBO-- 7 V-
DC Collector Base Gain hfe Min-100 at 10 mA at 1 V 100 at 1 A at 1 V 25 at 3 A at 1 V 15 at 4 A at 1 V-
DC Current Gain hFE Max-100-
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
ZX5T953GTA Bipolar Transistors - BJT PNP 100V
ZX5T953G 全新原裝
ZX5T953GTADIODES 全新原裝
ZX5T953GTC 全新原裝
ZX5T953GTA Bipolar Transistors - BJT PNP 100V
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