| PartNumber | ZXMN10A11KTC | ZXMN10A11GTA |
| Description | MOSFET N-Chan 100V MOSFET (UMOS) | MOSFET 100V N-Chnl UMOS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | SOT-223-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 3.5 A | 2.4 A |
| Rds On Drain Source Resistance | 350 mOhms | 350 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 10 V |
| Qg Gate Charge | 5.4 nC | 5.4 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 8.5 W | 2 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 1.65 mm |
| Length | 6.73 mm | 6.7 mm |
| Series | ZXMN10A | ZXMN10A |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 3.7 mm |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 4 S | 4 S |
| Fall Time | 3.5 ns | 3.5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 1.7 ns | 1.7 ns |
| Factory Pack Quantity | 2500 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 7.4 ns | 7.4 ns |
| Typical Turn On Delay Time | 2.7 ns | 2.7 ns |
| Unit Weight | 0.139332 oz | 0.003951 oz |
| Type | - | MOSFET |